【摘要】 采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件。由SEM形貌观测分析,当薄膜名义厚度>25nm时,可形成连续性镀层。I-t暂态曲线及STM结果表明,NiFe薄膜在低过电位下以三维岛状模式生长,在高过电位下以二维层状模式生长,其RMS表面粗糙度最小值仅为0.5nm。XRD结果表明,薄膜为面心立方Ni基固溶体结构,并具有明显的(111)晶面择优取向。当薄膜组成为Ni80Fe20时,各向异性磁电阻效应(AMR)最大,AMR值为1.8%。更多还原

【Abstract】 NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si（111） substrates.The electrochemical conditions for Ni₈₀Fe₂₀ permalloy were determined.SEM images showed that the films were continuous with the nominal thickness over 25nm.The results of I-t transient curves and STM characterization revealed that,the growth mode of NiFe films was 3D islands type at low overpotential,and 2D layer-by-layer type at high overpotential.The minimum RMS surface roughness value was only（0.5）nm.XRD result indicated that the film,which was fcc Ni-based solid solution structure,presented an evident（111） preferred orientation.The maximum anisotropy magnetorisistance（AMR） value of 1.8% was obtained with the composition of Ni₈₀Fe₂₀.更多还原