【摘要】 报道了LD激射波长会随条宽发生明显变化。对有相同外延生长结构和制作工艺、不同条宽的960nmLD的激射波长进行研究发现,条宽为130、100、75和50μm的器件的激射波长依次变短。进一步分析认为,这是因为条宽变窄导致器件阈值电流密度、阈值载流子密度变大造成的。根据GaAs材料在不同注入载流子密度下的增益谱及器件条宽变化对阈值载流子密度的影响,可以对实验现象进行合理的解释,从而在器件研制中可通过改变条宽对器件的激射波长在一定范围内进行调节。更多还原

【Abstract】 The paper reports that the lasing wavelength of the LD changes markedly with the width of the active region.The lasing wavelnegths of the LDs emitting at 960 nm,which have the same epitaxial growth and different width of active region,are investigated.It is found that the lasing wavelength of the device is becoming short as the stripe width is getting narrow.Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spectrum of GaAs material,and that is the result of narrowing the width of the active region.Therefore,the lasing wavelength can be easily modified by changing the stripe width of LDs in practice.更多还原