【摘要】 对用于光电集成(OEIC)的InP基异质结双极性晶体管(HBT)进行了分析,提出了一种新的集电区外延结构,该结构是在单HBT(SHBT)的集电区与次集电区间加入特定厚度与掺杂浓度的p-InGaAs层和n-InP层,既适用于集成光探测器,又较好地解决了SHBT反向击穿电压低、传统双HBT(DHBT)电子堆积效应等问题,并具有外延层生长简单、集电区电子漂移速率高等优点。更多还原

【Abstract】 The InP based HBT(heterojunction bipolar transistor used for OEIC(optoelectronic integrated circuits)is analysed,and a novel collector layer structure is proposed,which is achieved by introducing p-InGaAs layer and N-InP layer with specific thickness and doping level between the collector and subcollector of SHBT(single heterojunction bipolar transistor).This composite collector structure is suitable for integrated pin photodetector and solves the poor breakdown voltage of SHBT and the electron blocking efforts of traditional DHBT(double heterojunction bipolar transistor).In addition,the epitaxy layer of this structure is easy to grow and the electron velocity of collector is high.更多还原