【摘要】 详细分析了用于CMOS图像传感器的新型半导体光电器件的工作原理和光电特性,建立解析模型确定由其构成的像素单元的填充系数,优化光电响应特性。由于引入PN注入结,新型光电器件沟道电流同时存在电子电流和空穴电流,提高了器件的响应灵敏度,避免了大的寄生电容,提高了信噪比。更多还原

【Abstract】 The operating principle and photoelectric characteristics of a new photodetector for CMOS image sensor was analyzed in detail. An analytical expression was presented to confirm the fill factor of the pixel and make the photo response optimization based on the new photodetector. Due to the introduced PN junction, the photocurrent is made up by both electronic and pole. As a result, the sensitivity and signal to noise ratio are increased, the parasitic capacitance is decreased.更多还原