【摘要】 采用溶胶-凝胶法在p-型单晶硅的表面镀上一层TiO2-SnO2纳米复合薄膜,并在一定的温度下煅烧得到TiO2-SnO2/Si复合材料.实验研究发现,在TiO2中掺杂一定量的SnO2会使TiO2/Si复合材料的光电压增强,且SnO2的掺杂会抑制TiO2的晶相转变,使复合材料的高温稳定性增强.另外,SnO2的掺杂量和煅烧温度对复合材料的光电压都有影响.当SnO2掺杂量约为20%,煅烧温度为600℃时复合材料的光电压最强.更多还原

【Abstract】 TiO2-SnO2/Si composite nanomaterial was prepared by depositing a TiO2-SnO2 thin film on the p-Si substrate with sol-gel method and then calcining at certain temperature.The results showed that the addition of SnO2 to TiO2 can inhibit the transformation of crystal phase of TiO2,improve the stability of TiO2/Si at high temperature and enhance the photovoltage of TiO2/Si.Furthermore,the content of SnO2 and calcination temperature can influence the photovoltage of TiO2/Si.The photovaltage of TiO2-SnO2/Si which contented SnO2 20% was maximum at annealing temperature of 600 ℃.更多还原