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C~+注入a-SiN_x∶H薄膜的微结构及光发射的研究
Photoluminescence of SiCN Thin Films Prepared by C~+ Implantation into Amorphous SiN_x∶H
【摘要】 常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiNx∶H薄膜进行低能量高剂量的C+注入后,在800~1 200℃高温进行常规退火处理。X射线光电子能谱(XPS)及X射线光电子衍射(XRD)等实验结果表明,当退火温度由800℃升高到1200℃后,薄膜部分结构由SiCxNy转变成SiNx和SiC的混合结构。低温下利用真空紫外光激发,获得分别来自于SiNx、SiCxNy、SiC的,位于2.95,2.58,2.29 eV的光致发光光谱。随着退火温度的升高,薄膜的结构发生了变化,发光光谱也有相应的改变。
【Abstract】 Generally,silicon carbon nitride(SiCN) thin films have attracted much interest for a wide rang of applications due to their excellent thermal properties,large bonding energy and adjustable band gaps varying from UV to visible light range.Hydrogenated amorphous silicon nitride films(a-SiNx∶H) were implanted by C+ ions with 30 keV and the doping dose of 2×1017 ions cm-2 at room temperature and then treated by annealing for 2 hours at 800,1 000 and 1 200 ℃,respectively.The composition and bonding structure of SiCN were analyzed by X-ray photoelectron spectroscopy(XPS),Raman spectroscopy and X-ray diffraction(XRD).The luminescent properties of SiCN have been studied by synchrotron radiation at RT and 20 K,respectively.XPS results showed that the C—Si,CN and Si—N bonds existed in the films.When the films were annealed at 800 ℃ for 2 hours,two structures could be found at different depths.SiC and SiNx were found in the depth range of 50~100 nm,while the SiCxNy still existed at the depth of 250 nm.And the Raman spectrum of the SiCN film shows two peaks at approximately 1 350 and 1 600 cm-1,which corresponded to D and G bands of sp2-carbon.The presence of this pronounced Raman band indicates SiCxNy structure within the film.Furthermore,XRD indicated that the SiCN films annealed at 1 200 ℃consisted of the structures of α-Si3N4,β-Si3N4 and β-SiC.After SiCN was annealed at 800 ℃,four luminescent emission bands of SiCN under the excitation of 197 nm at 20 K were observed,which were located at 2.95,2.58,2.29 and 2.12 eV and were attributed to the emissions of SiNx,SiCxNy,SiC and SiOx respectively.However,after the film was annealed at 1 200 ℃,for the modification of particle state and the improvement of film structures,the inten-sity of luminescence signals at 2.58 and 2.29 eV were different.The PL signature in SiCN films can be used to monitor the physical structure,and to point out their defect content.
【Key words】 SiCN; C+ implantation; high-temperature annealing; X-ray photoelectron spectroscopy(XPS); photoluminescence(PL);
- 【文献出处】 发光学报 ,Chinese Journal of Luminescence , 编辑部邮箱 ,2007年04期
- 【分类号】O484
- 【被引频次】1
- 【下载频次】76