【摘要】 在分析传统环形振荡器的基础上,设计了一种新型高频、低噪声环形振荡器.采用改进的全开关状态的延时单元和双重反馈环结构,克服了传统环形振荡器振荡频率低、噪声性能差的缺点,可以有效抑制PVT(Pro-cess Voltage Temperature)偏差对频率的影响.采用TSMC0.18μm CMOS工艺参数,电源电压1.8V,功耗为37.5mW.仿真得到在振荡器中心频率为4GHz时的单边带相位噪声为95.6dBc/Hz@1MHz.更多还原

【Abstract】 Based on the analysis of traditional ring-oscillators,a high frequency ring oscillator of low phase noise is designed with improved structure to suppress deviation of PVT(Process Voltage Temperature).Improved full switching delay cells and dual-feedback loops are adopted to overcome the drawback of traditional CMOS ring oscillator of low frequency and poor noise performance.The design is based on the 0.18 μm CMOS model of TSMC.Power consumption of the circuit is 37.5 mW of supply voltage of 1.8 V.Simulations show the phase noise of a four-stage design is 95.6 dBc/Hz at 1 MHz offset from a 4 GHz center frequency.更多还原