节点文献

(Pb,La)TiO3薄膜电畴生长的压电响应力显微镜研究

Study on ferroelectric domain’s growth of(Pb,La)TiO3 films by piezoresponse force microscopy

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 张海力王志红黄惠东黄嘉白凡郭晓华

【Author】 ZHANG Hai-li~1,WANG Zhi-hong~(1*),HUANG Hui-dong~1,HUANG Jia~1,BAI Fan~1,GUO Xiao-hua~2(1.State Key laboratory of electronic thin films and integrated device,University of electronic science and technology of China,Chengdu Sichuan 610054;2.Department of quality and check,the Chinese people’s Liberation Army NO.3303 factory,Wuchang Hubei 430200,China)

【机构】 电子科技大学电子薄膜与集成器件国家重点实验室中国人民解放军3303工厂质检处 四川成都610054四川成都610054湖北武昌430200

【摘要】 压电响应力显微镜为铁电薄膜电畴的研究提供了一种有效的检测方法。本实验用压电响应力显微镜(PFM)对不同退火温度的(Pb,La)TiO3铁电薄膜进行表征,得到了各个样品相应的形貌像、面外电畴像和面内电畴像。结果表明,随退火温度升高,(Pb,La)TiO3铁电薄膜的表面形貌表现出从粘连到结晶较好,到出现抱团的变化过程;此外,随退火温度升高,铁电薄膜的自发极化强度先增强后减弱。通过对这一系列铁电薄膜电畴进一步研究得到:在625℃退火1 h后,(Pb,La)TiO3铁电薄膜以非铁电相为主;而在650℃和675℃退火1 h后,(Pb,La)TiO3铁电薄膜以铁电相为主。

【Abstract】 The piezoresponse force microscopy(PFM) is a useful method to study ferroelectric domains of ferroelectric films.Using PFM,the topography, OPP and IPP of(Pb,La)TiO3 samples after annealing at different temperatures were studied,respectively.The results indicated that the topography of(Pb,La)TiO3 films changed form conglutination to good-crystallinty and then combination together as the annealing temperature increased.The spontaneous polarization of ferroelectric films was strengthened and then weakened with the increasing of annealing temperature.In addition,the(Pb,La)TiO3 film was mainly in a non-ferroelectric phase after annealing for 1 h at 625℃.However,the(Pb,La)TiO3 film was mainly in an ferroelectric phase after annealing for 1h at 650℃ and 675 ℃,respectively.

【基金】 国家重大基础研究项目(No.51310207)
  • 【文献出处】 电子显微学报 ,Journal of Chinese Electron Microscopy Society , 编辑部邮箱 ,2007年01期
  • 【分类号】TB383.2
  • 【被引频次】6
  • 【下载频次】246
节点文献中: 

本文链接的文献网络图示:

本文的引文网络