【摘要】 利用0.25μm GaAs PHEMT工艺设计并制作了一种Ka波段低噪声放大器芯片.提出了适用于低噪声放大器的PHEMT器件特征.电路采用四级级联结构.利用微带电路实现输入、输出和级间匹配.通过对电路增益、噪声系数和驻波比等指标进行多目标优化,确定了器件参数.该放大器测试结果为:26.5~36 GHz频段内增益大于20 dB;多数测试点噪声系数小于3 dB,其中34 GHz频点噪声仅为1.94 dB;芯片面积2.88 mm×1 mm.更多还原

【Abstract】 Design and fabricate a kind of Ka band monolithic low noise amplifier(LNA) with 0.25 μm GaAs PHEMT process.The characteristics of PHEMT applicable to LNA are brought.The circuit uses a four-stage structure.Microstrip line networks are used for the matching of input,output and inter-stages.The parameters of devices are ascertained by a multi-purpose optimization including gain,noise figure,VSWR,and so on.Across the 26.5～36 GHz frequency band,the LNA chip has small signal gain more than 20 dB;The noise figures are better than 3.0 dB at the most test points;At the frequency of 34 GHz,the noise figure is only 1.94 dB; The chip size is 2.88 mm×1 mm.更多还原