【摘要】 采用传统固相烧结法制备了Pr6O11和V2O5共同掺杂的Bi4Ti3O12铁电陶瓷。XRD分析表明,Pr6O11和少量V2O5的掺杂没有引起材料结构的改变。适当比例Pr6O11的掺杂会使材料的铁电性能有明显的改善,但其电输运特性明显不同于3价稀土离子的掺杂。实验表明,钒掺杂对材料铁电性能的影响主要体现在低电场下,不能简单地以氧空位的变化来解释。配比为Bi3.08Pr0.75Ti2.98V0.02O12的样品的电学性能稳定并且具有较大的剩余极化。更多还原

【Abstract】 Pr6O11 and V2O5 doped bismuth titanates were prepared by conventional ceramic technique. For all the samples,XRD analyses revealed Bi-layered perovskite structures of Bi4Ti3O12 with a large range of Pr-doping and a small content of V2O5. The results show that a suitable amount of Pr-doping can give a large remnant polarization and a low coercive field,however,its conductive properties are obviously different from three-valence rare-earth ions doped samples. Also,the results show that the effects of V-doping on the ferroelectric properties are mainly embodied in a lower field,this result could not be explained simply by the changes of oxygen vacancies. For Pr and V co-doped samples,the sample of Bi3.08Pr0.75Ti2.98V0.02O12 exhibits steady electrical properties and gives a large polarization.更多还原