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低温多晶硅薄膜制备技术应用进展
Application progress on the preparation of low temperature polysilicon films
【摘要】 系统介绍了金属诱导横向晶化法、准分子激光晶化法、触媒化学气相沉积法(Cat-CVD)以及电感耦合等离子体化学气相沉积法(ICP-CVD)制备低温多晶硅薄膜的原理及进展。对不同制备工艺的优势和不足进行了比较,重点讨论了Cat-CVD和ICP-CVD在实用化中需克服的技术问题。对上述制备方法的应用前景作了评述和展望。
【Abstract】 The principles and progress of LTPS preparation methods including metal induced lateral crystallization(MILC),excimer laser annealing(ELA),catalytic chemical vapor deposition(Cat-CVD) and inductively coupled plasma chemical vapor deposition(ICP-CVD) were systematically introduced.Then,the advantages and shortcomings of different processes were compared with each other.Discussed were several problems of Cat-CVD and ICP-CVD in practical applications.Finally,a brief review and application prospect of above-mentioned methods are also presented.
【关键词】 半导体技术;
低温多晶硅薄膜;
综述;
金属诱导横向晶化;
准分子激光晶化;
触媒化学气相沉积;
电感耦合等离子体化学气相沉积;
【Key words】 semiconductor technology; LTPS; review; MILC; ELA; Cat-CVD; ICP-CVD;
【Key words】 semiconductor technology; LTPS; review; MILC; ELA; Cat-CVD; ICP-CVD;
【基金】 四川省应用基础研究基金资助项目(04JY029-104)
- 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2007年08期
- 【分类号】TN304.05
- 【被引频次】5
- 【下载频次】819