【摘要】 在硼酸镀液中以单晶S i(111)为基底用双槽法制备Cu/Co多层膜,在镀液中分别加入了镀铜添加剂2000#和镀钴添加剂5#。探讨了镀层电结晶成核机理,在基础镀液中铜电结晶为三维连续成核过程,钴电结晶在较低电位下为三维连续成核,在较高电位下为三维瞬时成核过程。加入添加剂后,铜、钴电结晶均为三维瞬时成核过程。测试了Cu/Co多层膜的磁性能;添加剂能提高多层膜的磁性能,无添加剂的Cu/Co多层膜的巨磁阻(GMR)值约为5%,而在加入了添加剂后,其GMR值高达52%。更多还原

【Abstract】 Cu/Co multilayers were prepared on monocrystalline silicon(111) by using double-bath method in boric acid solution with additives added.The effects of additives on Cu/Co multilayers and the mechanism of nucleation were studied.The experiment results show that the growth kinetics for Cu is consistent with progressive nucleation.(And) for Co,there is a transition from progressive to instantaneous nucleation at about 1.2 V.In addition,GMR values were measured by PPMS at room temperature.The results show that: Additives can enormously improve the magnetism of the multilayers.GMR value of Cu/Co multilayers without additives was only about 5%.While with additives,the GMR value was up to 52%.更多还原