【摘要】 我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8K,Jc(77K,0T)达到2.6MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7K,Jc(77K,0T)也可以达到0.45MA/cm2.更多还原

【Abstract】 Preparation and properties of Tl-2212 thin films on YSZ/CeO2 buffered and CeO2/YSZ/CeO2 buffered Ni RABiTS have been studied,respectively. The buffer layers were prepared using PLD method. Tl-2212 thin films were fabricated by magnetron sputtering and post-annealing process. XRD experimental results improved that the Tl-2212 thin films were epitaxial growth on both of the buffered RABiTS. The Tc of 102.8 K and Jc(77 K, 0T) of 2 MA/cm2 could be obtained for the Tl-2212 thin film on the RABiTS with CeO2/YSZ/CeO2 layer. Tc of 97.7 K and Jc(77 K, 0T) of 0.45 MA/cm2 could be obtained for the film on the RABiTS with YSZ/CeO2 layer.更多还原