【摘要】 采用Fe膜热硫化技术制备了具有不同比表面积和比晶界面积的FeS₂薄膜,并测定其载流子浓度和电阻率,研究了FeS₂薄膜表面和晶界等面缺陷对FeS₂薄膜电学性能的影响．结果表明,表面和品界两种面缺陷对FeS₂薄膜的电学性能有类似的影响规律．在一定范围内,随着薄膜比表面积和比晶界面积的增大,载流子浓度提高而电阻率下降．面缺陷数量的变化可导致FeS₂晶体中点缺陷数量、禁带中缺陷能级密度、不充分相变产物比例和相变应力水平的变化,从而导致载流子浓度和电阻率的变化．更多还原

【Abstract】 FeS₂ thin films were prepared by sulfuration annealing iron thin films.The effects of crystal planar defects on electrical properties were investigated by measuring the electrical resistivity and the carrier concentration in the FeS₂ films with different specific surface area and specific grain-boundary area.The change behavior of the electrical resistivity and the carrier concentration with the specific surface area is generally similar to that with the specific grain-boundary area in a certain range.With the increase of the specific surface area and the specific grain-boundary area,the carrier concentration increases and the electrical resistivity decreases.The suggested mechanism responsible for the change behavior of the electrical resistivity and the carrier concentration is that the ratio variation of crystal planar defects in the FeS₂ films results in the possible variations in the concentration of crystal point defects,the distribution of energy levels added in forbidden band,the amount of insufficient reaction products in sulfuration annealing and the stress level of phase transformation.更多还原