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MoSi2发热元件冷热端扩散接合工艺的研究
Diffusion bonding technology of MoSi2 heating element
【摘要】 为了研究扩散接合工艺参数对二硅化钼发热元件冷热端的接合强度的影响,对接合端面状态、接合温度、保温时间、接合压力和接合气氛等工艺条件进行了对比分析,并根据接合部位的断裂强度和微观结构的研究结果,建立了在本实验条件下最佳发热元件冷热端扩散接合工艺条件:接合端面粗糙度为1.5μm,接合温度1570-1600℃,保温时间30-60 s,接合载荷15 kg,接合气氛为氩气.
【Abstract】 In order to study the effect of diffusion bonding technology parameters on the joint strength of MoSi2 heating element cold-hot end,the technological papameters such as temperature,pressure,holding time and atmosphere were researched. And the effect of the state of the end surface of MoSi2 bars on the strength and microstructure of the junction was analyzed.Based on results,the appropriate technology parameters were put forward: roughness of end surface of 1.5 μm, jointing temperature of 1570~1600 ℃,holding time of 30~60 sec,jointing load of 15 kg and atmosphere of argon.
【Key words】 MoSi2 heating element; diffusion bonding; microstructure; jointing strength;
- 【文献出处】 材料科学与工艺 ,Materials Science and Technology , 编辑部邮箱 ,2007年01期
- 【分类号】TG453.9
- 【被引频次】5
- 【下载频次】141