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硅化处理对炭纤维石墨化度的影响
Effects of Siliconizing on Graphitization Degree of Carbon Fiber
【摘要】 对炭纤维在真空炉中进行2100℃硅化处理。用SEM分析了炭纤维在硅化处理前后表面形貌的变化,利用能谱测定了其硅化处理后的成分变化并加以分析,用X射线衍射分析了热处理和硅化处理后的炭纤维石墨化度的变化。结果表明:处理后的炭纤维出现富C的SiC表层,内部为含有SiC的C芯,并伴随有类球状SiC颗粒的形成。沿炭纤维径向分布的SiC含量呈现梯度分布,其芯部的SiC含量为2.46%(质量分数,下同),靠近表层的SiC含量增加到7.53%,表面的SiC含量达到13.25%;纤维表面的类球状颗粒为含C的SiC颗粒,其中SiC的含量为30.55%。在2100℃热处理的炭纤维石墨化度几乎为0,而在2100℃硅化处理的炭纤维石墨化度高达48.5%。
【Abstract】 The carbon fiber was siliconized in vacuum oven at 2100℃. The surface morphology of carbon fiber was investigated by scanning electron microscopy (SEM). The composition of carbon fiber was analyzed by energy dispersive spectrum (EDS) technique. Graphitization of carbon fiber after heat-treatment and siliconizing was studied by X-ray diffraction (XRD). The results indicate that the surface and the interior of carbon fiber are composed of SiC surface with rich C element and carbon core with SiC, respectively. The spheroid SiC particles formed on the surface of carbon fiber. The SiC content in the carbon fiber is radial and grades distributing with its central content is 2.46%(mass fraction) in the fiber, gradually added to 7.53% near the fiber surface and 13.25% on the surface. The spherical particles on the fiber surface are SiC particles with rich C element, and its content is 30.55%. The graphitization degree of carbon fiber is nearly zero after heat-treatment at 2100℃,however it is about 48.5% after siliconizing at 2100℃.
- 【文献出处】 材料工程 ,Journal of Materials Engineering , 编辑部邮箱 ,2007年01期
- 【分类号】TB332
- 【被引频次】7
- 【下载频次】280