【摘要】 针对反应烧结碳化硅(RB-SiC)的磨削工艺参数及其磨削机理进行研究。着重分析了磨削工艺参数对反应烧结碳化硅材料的表面粗糙度Ra、磨削效率和显微硬度以及磨削后陶瓷表面形貌的影响并确定最佳磨削工艺参数。最佳磨削条件为磨削深度0.47μm/s、工作台速度2.5r/min和光磨时间5min。磨削后碳化硅Ra最低(Ra<100nm),加工硬化变质层较小,表面完整性较好。同时对反应烧结碳化硅的磨削机理进行研究,确定其是以脆性断裂为主的材料去除方式,其形式包括晶粒去除、材料剥落、脆性断裂等。更多还原

【Abstract】 This paper mainly aimed at the optimizing of grinding parameters and investigating of grinding mechanism of reaction bond silicon carbide (RB-SiC). The characteristics of ground surface are explored. The effect of grinding parameters,grinding efficiency,micro-hardness on surface roughness (Ra)and on subsurface structure are analyzed. The optimization grinding parameters were determined: depth of cut of 0.47μm/s,worktable rotation speed of 2.5r/min and burnishing time of 5 min. Ground under these conditions smoother surface (Ra<100nm),good surface integrity and lower sub-surface damage can be obtained. This work also investigated grinding mechanism. The main removal mode is brittle fracture,which including crystal removal,material peel off and brittleness rupture.更多还原