【摘要】 运用微Raman谱仪以不同功率的激光入射到用阳极脉冲腐蚀制备的多孔硅样品以研究多孔硅的稳定性。用斯托克斯与反斯托克斯散射强度的比率确定样品的温度。观察比较不同温度下多孔硅样品的Raman谱趋向,发现在激光功率和样品温度之间的关系曲线上有3个过程,与Raman频移和Raman强度的曲线相一致。所有现象都可以用Si-O键和非晶Si被氧化的机制进行解释。更多还原

【Abstract】 The thermal stability of porous silicon (PS) fabricated by pulsed anodic etching method is investigated by using micro-Raman spectra with different incident laser powers. The ratio of Stokes and Anti-Stokes scattering intensities are used to determine temperature of the sample.The Raman spectra of PS in different temperatures are compared. The trend of spectra is observed. The curve indicating relations between laser power and sample temperature reveals three processes. It is consistent with the curve of Raman shift and Raman intensity. All the phenomena are explained by the oxygenation mechanism of Si-O bond and amorphous Si.更多还原