【摘要】 基于对序进应力加速寿命试验的研究,提出了一种快速确定半导体器件寿命的方法,建立了理论模型．以样品3CG120为例,进行了175～345℃范围内的序进应力加速寿命试验,快速提取样品的失效敏感参数hFE的退化量与温度的关系,得到了样品的hFE的温度特性和退化特性,并根据模型计算得到器件的失效激活能和寿命．结果与文献能很好地吻合,验证了该方法的可行性．更多还原

【Abstract】 A method that enables rapid determination of lifetime for semiconductor devices based on the study of process-stress accelerated life test is presented, and the theory model is constructed. To demonstrate the ap-plication of the method, 3CG120 a kind of mature products, has been used as a sample for test. A process-stress accelerated test was conducted in the temperature range from 175℃to 345℃to rapidly extract the da-ta of relationship between temperature and the degradation of sensitive parameters, and the temperature char-acteristics and degenerating characteristics of sensitive parameters under electrical stress of the specimens were acquired. Then the related reliable parameters, such as activation energy and lifetime were figured out by uti-lizing the model. The results of experiments are in agreement with literature, which proves that the method is feasible.更多还原