【摘要】 优化了GaAs基InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管(PHEMT)的外延结构,有利于获得增强型PHEMT的正向阈值电压.采用光学接触式光刻方式,实现了单片集成0.8μm栅长GaAs基InGaP/AlGaAs/In-GaAs增强/耗尽型PHEMT.直流和高频测试结果显示:增强型(耗尽型)PHEMT的阈值电压、非本征跨导、最大饱和漏电流密度、电流增益截止频率、最高振荡频率分别为0.1V(-0.5V),330mS/mm(260mS/mm),245mA/mm(255mA/mm),14.9GHz(14.5GHz)和18GHz(20GHz).利用单片集成增强/耗尽型PHEMT实现了直接耦合场效应晶体管逻辑反相器,电源电压为1V,输入0.15V电压时,输出电压为0.98V;输入0.3V电压时,输出电压为0.18V.更多还原

【Abstract】 The material structure of GaAs-based InGaP/AlGaAs/InGaAs PHEMTs was optimized to obtain the positive threshold voltage of an enhancement-mode PHEMT.Contact-mode photolithography was used for realizing the monolithic integration of 0.8μm gate length GaAs-based InGaP/AlGaAs/InGaAs enhancement-and depletion-mode PHEMTs.Excellent DC and high frequency performance are achieved.VT,gm,JDSS,fT,and fmax are 0.1V,330mS/mm,245mA/mm,14.9GHz,and 18GHz for E-mode PHEMTs,and-0.5V,260mS/mm,255mA/mm,14.5GHz,and 20GHz for D-mode PHEMTs,respectively.DCFL inverters based on monolithic integration of GaAs-based InGaP/AlGaAs/InGaAs enhancement-and depletion-mode PHEMTs are fabricated.The supply voltage is 1V.When the input voltages are 0.15 and 0.3V,the output voltages are 0.98 and 0.18V,respectively.更多还原