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非晶态As₂S₈半导体薄膜波导的热处理效应

Effect of Annealing Temperature on Amorphous Semiconductor As₂S₈ Film Waveguide

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【Author】 Zou Liner1,,Chen Baoxue2,Du Liping2,Liu Xiaoqing1,Hamanaka H3,and Iso M4(1 Department of Physics,Nanchang University,Nanchang 330031,China)(2 College of Optics and Electronic Information Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)(3 Department of Material Chemical Engineering,Tokyo Hosei University,Tokyo 184-8584,Japan)(4 Department of Chemical Engineering,Tokyo University of Agriculture and Technology,Tokyo 184-8588,Japan)

【机构】南昌大学物理系；上海理工大学光学与电子信息工程学院；日本法政大学材料化学系；日本东京农工大学化工系南昌330031；上海200093；南昌330031；日本184-8584；日本184-8588；

【摘要】研究了非晶态As2S8半导体薄膜在热作用下的结构变化效应.采用棱镜耦合技术、喇曼光谱测试技术,确认了As2S8薄膜经热处理后,薄膜密度增高和折射率增大的现象.实验表明,淀积态非晶As2S8半导体薄膜经紫外光饱和照射后,再经退火处理,当光折变在退火温度不低于160℃时,出现不完全可逆现象,可逆程度跟退火温度有关.实验显示,退火态非晶As2S8半导体薄膜在玻璃转化温度130℃时退火处理,光折变存在完全可逆现象.光传输实验显示,热处理后的非晶态As2S8半导体薄膜波导,其传输损耗减小了约4dB/cm.更多还原

【Abstract】 Amorphous semiconductor As2S8 film is shown to undergo structural transformations under thermal machining.Increases in the refractive index and density are found through the application of a prism coupler and Raman spectra.The experimental results demonstrate that the no-full reversible photorefractive phenomenon in the as-deposited and well-illuminated As2S8 film until the annealing temperature reaches 160℃ is found,and depends on the annealing temperature.The full reversible photorefractive phenomenon is observed in annealed As2S8 film after annealing under the glass transition temperature of 130℃.An optical transmission experiment shows that the transmission loss of an amorphous semiconductor As2S8 film after annealing decreases by about 4dB/cm.更多还原