【摘要】 研究LDMOS在一次雪崩击穿后的大电流区,栅压对器件内部温度的影响.结果表明:温度随正栅压升高而升高,随负栅压升高而降低,并分析了有源区内电场强度、电流密度和功率密度随栅压的变化规律.从而证明,与LDMOS栅接地时相比,正栅压降低了器件的静电放电能力,而负栅压则提高了器件的静电放电能力.更多还原

【Abstract】 The influence of gate voltages on the temperature of LDMOS under ultra-high transient currents is studied.The results show that in comparison with gate-grounded conditions,the temperature in the device rises when the gate voltages are positive,and the temperature falls when the gate voltages are negative.The distributions of the electric fields,conduction currents,and dissipated power densities under different gate voltages are also investigated.It is proved that positive gate voltages weaken the electro-static discharge capability of LDMOS,and negative gate voltages enhance it.These results can be used as a reference for the reliability of power devices.更多还原