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PS:NPB复合空穴传输层的有机电致发光特性

Organic Electroluminescent Characteristics of Compound PS∶NPB Hole Transporting Layer

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【作者】 锁钒; 于军胜; 邓静; 娄双玲; 蒋亚东;

【Author】 Suo Fan,Yu Junsheng,Deng Jing,Lou Shuangling,and Jiang Yadong(State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,China)

【机构】 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室; 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室 成都610054; 成都610054;

【摘要】 制备了结构为indium-tin-oxide(ITO)/polystyrene(PS)∶N,N’-bis-(3-Naphthyl)-N,N’-biphenyl-(1,1’-biphenyl)-4,4’-diamine(NPB)/tris-(8-hydroxyquinoline)-aluminum(Alq3)/Mg∶Ag的绿光双层有机电致发光器件(OLED).空穴传输层采用复合结构,为有机小分子空穴传输材料NPB与聚合物母体材料聚苯乙烯(PS)的掺杂体系,并利用旋涂工艺简化了薄膜制备.通过调节该体系的组分,制备出具有不同PS∶NPB浓度比的OLED器件,并对器件的电致发光特性进行了表征.研究发现,不同的NPB掺杂浓度对复合空穴传输层以及器件的光电特性具有显著影响.当PS和NPB的组分浓度比为1时,可以最大限度地优化该器件的性能.该项研究有助于OLED器件复合功能层的构建以及工艺方法的改进.

【Abstract】 Green organic light-emitting devices with the structure of indium-tin-oxide (ITO)/polystyrene(PS)∶N,N’-bis-(3-naphthyl)-N,N’-biphenyl-(1,1’-biphenyl)-4,4’-diamine (NPB)/tris-(8-hydroxyquinoline)-aluminum (Alq3)/Mg∶Ag were fabricated.A doping system consisting of small-molecular hole transporting material NPB and polymeric matrix polystyrene (PS) was employed as the compound hole transporting layer (HTL),and the thin film preparation was simplified via the spin-coating technique.By adjusting the component ratio of the system,we constructed several devices with different concentration proportions of PS∶NPB.The electroluminescent characteristics of the devices were investigated and discussed.The results demonstrate that the doping concentration of NPB has a remarkable impact on the optoelectric performance of both the HTL and the device.Optimum device performance could be obtained by choosing the best concentration proportion of PS∶NPB to be 1∶1.This contributes to the construction of compound functional layers of OLED devices and to the technical improvement.

【基金】 国家杰出青年基金(批准号:60425101);教育部新世纪优秀人才计划(批准号:NCET-06-0812);电子科技大学中青年学术带头人计划(批准号:060206)资助项目~~
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2007年08期
  • 【分类号】TN383.1
  • 【被引频次】2
  • 【下载频次】169
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