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大电流、高稳定性的LDO线形稳压器

High Stability LDO with Large Output Current

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【作者】 王义凯; 王忆; 巩文超; 何乐年;

【Author】 Wang Yikai,Wang Yi,Gong Wenchao,and He Lenian (Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China)

【机构】 浙江大学超大规模集成电路研究所; 浙江大学超大规模集成电路研究所 杭州310027; 杭州310027;

【摘要】 以设计输出电流为800mA的高稳定线性稳压器(low-dropout voltage regulator,LDO)为目标,利用工作在线性区的MOS管具有压控电阻特性,构造零点跟踪电路以抵消随输出电流变化的极点,并且采用了改进型米勒补偿方案使电路系统具有60°的相位裕度,达到了大输出电流下的高稳定性要求.另外,分析了电路在转换发生时电路结构参数和负载整流特性的关系,提出了一种能在瞬间提供大电流的转换速率加强电路,达到了在负载电流从800mA到10mA跳变时,输出电压的跳变量控制在60mV以内,并且最长输出电压恢复时间在500μs以内.芯片采用CSMC公司的0.6μm CMOS数模混合信号工艺设计,并经过流片和测试,测试结果验证了设计方案.

【Abstract】 A design of a low-dropout (LDO) voltage regulator with an output current of 800mA is proposed.By introducing a zero-pole tracking circuit with a MOS resistor working in the linear region,the frequency response is independent of the load current.Moreover,with ameliorated miller compensation,a 60° phase margin is guaranteed.Based on the analysis of slewing behavior versus circuit parameters,the load regulation property is improved with a slew rate enhancement circuit which can supply a large current to speed up the slew rate.The precision of the output voltage is maintained within ±60mV under varying load conditions from 800 to 10mA,and the settling time is about 500μs.The chip is implemented in CSMC 0.6μm mixed-signal technology.The designed circuit is validated by the results of the chip test.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2007年07期
  • 【分类号】TM44
  • 【被引频次】25
  • 【下载频次】801
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