节点文献
面向5GHz无线应用的单片InGaP/GaAs HBT压控振荡器(英文)
A Monolithic InGaP/GaAs HBT VCO for 5GHz Wireless Applications
【摘要】 介绍了一种由商用InGaP/GaAs异质结双极晶体管工艺制成、基于负阻原理的单片压控振荡器,此电路定位于5GHz频段下的无线应用.在实际使用中,除了旁路和去耦电容外,无需外接其他外部元件.测试得到的输出频率范围超过300MHz,为4.17~4.56GHz,与仿真结果非常吻合;相位噪声为-112dBc/Hz@1MHz;在3.3V电源电压下,其核心部分的直流功耗为15.5mW,输出功率为0~2dBm.为了与其他振荡器比较,还通过计算得到了相位噪声优值,约为-173.2dBc/Hz.同时,还讨论了负阻振荡器的原理和设计方法.
【Abstract】 A monolithic voltage controlled oscillator(VCO)based on negative resistance principle is presented utilizing commercially available InGaP/GaAs hetero-junction bipolar transistor(HBT)technology.This VCO is designed for 5GHz-band wireless applications.Except for bypass and decoupled capacitors,no external component is needed for real application.Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one.And the phase noise at an offset frequency of 1MHz is-112dBc/Hz.The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm.To compare with other oscillators,the figure of merit is calculated,which is about-173.2dBc/Hz.Meanwhile,the principle and design method of negative resistance oscillator are also discussed.
【Key words】 VCO; MMIC; wireless communication; InGaP/GaAs HBT;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2007年06期
- 【分类号】TN752
- 【被引频次】3
- 【下载频次】148