【摘要】 针对目前体硅腐蚀(硅各向异性腐蚀)的3DCA模型无法引入(211),(311),(331),(411)等较多高密勒指数晶面,模拟精度不高的问题,建立了一种高精度的体硅腐蚀模拟的新3D连续CA(元胞自动机)模型.模型可以有效引入(211),(311),(331),(411)等高密勒指数晶面,提高模拟精度.模拟结果与实验结果一致,证明了模型的模拟效果,对体硅腐蚀模拟研究和提高MEMS设计水平具有一定的实用意义.更多还原

【Abstract】 A novel three-dimensional (3D) continuous cellular automata (CA) model is presented for the simulation of silicon bulk etching processes.More high-index planes such as (211),(311),(331),(411) planes have been successfully incorporated into the novel 3D continuous CA model to increase the simulation accuracy.Simulation results agree with experimental results,indicating that the simulation accuracy has been increased.This is useful for the research of silicon bulk etching process and micro-electro-mechanical system (MEMS) design.更多还原