【摘要】 在n-型掺杂弱耦合GaAs/AlAs超晶格中,沿着垂直于超晶格平面方向加一个静态磁场,研究电子的隧穿过程.随着磁场的增加,相邻量子阱基态间的隧穿电流增加.这是由于磁场导致电子的隧穿机制发生了变化,即由低磁场下电子的非共振隧穿或跳跃电导向高磁场下电子的共振隧穿的转变.更多还原

【Abstract】 We apply a magnetic field B along the axis of an n-type doped weakly-coupled GaAs/AlAs superlattice(SL)to investigate the carrier transport in a low electric field.An abnormal enhancement of the current intensity by perpendicular B is observed for the ground state transport.Electron tunneling or hopping conduction via elastic scattering at low B switches over into resonant tunneling at higher B because in the latter case the electrons only partially occupy the first Landau level.更多还原