【摘要】 报道了用MOCVD方法制备的硅基ZnO薄膜中的中性施主-价带D0h发光.ZnO/p-Si结构经空气中700℃退火1h,然后进行X射线衍射(XRD)、光致发光(PL)谱和I-V特性测量.实验得到不同载气流量制备的样品都具有整流特性.深能级瞬态谱(DLTS)测量探测到各样品中存在两个施主深能级E1和E2.相应的室温PL谱测量显示样品近带边发射包含不同的发光线.利用高斯拟合方法,样品S2a的PL谱分解为三条发光线b,c和d,其中发光线b可归结为ZnO中的激子发射;DLTS测量得到的施主能级E1与发光线c和d的局域态电离能Ed相关,为D0h中心.此外,实验揭示E2能级的相对隙态密度与PL谱的发光强度成反比,表明深能级E2具有复合中心性质.更多还原

【Abstract】 D0h luminescence of ZnO films deposited on p-type Si substrates grown by MOCVD is reported.After annealing in air at 700℃ for 1h,the photoluminescence （PL） spectra,the I-V characteristics,and the deep level transient spectroscopy （DLTS） of the samples are measured.All the samples we measured have the rectification characteristic.The DLTS signals show two deep levels of E₁ and E₂.The Gauss fit curves of the PL spectra at room temperature show three luminescence lines,one of which is attributed to the excitation emission.The donor level E₁ measured by DLTS and the other two emission lines,which are very close to each other,have a close relation with the location state donor ionization energy E_d,and are thought to be from neutral donors bound to hole emission （D0h）.Moreover,the intensity of the PL spectra decreases while the relative density of E₂ increases,showing that E₂ has the properties of a nonradiative center.更多还原