【摘要】 在应力作用下,MOS晶体管的源漏电流的大小会随着沟道区所受应力大小而变化。基于MOS晶体管的这种力敏效应,采用晶体管和电阻构成压敏电桥,提出了一种新型的MOS晶体管式压力传感器。该器件在与目前最常用的压阻式压力传感器相比,继承了其制作工艺简单、稳定性和线性度好等优点,大幅提高了传感器灵敏度并降低了功耗,使得器件性能得到整体提高。更多还原

【Abstract】 MOSFET has stress sensitive phenomenon,in which the source current changes with the stress in channel region.Based on this principle,a novel MOSFET pressure sensor was proposed.Compared with the traditional piezoresistive pressure sensor,this new sensor’s sensitivity was improved significantly,and the power was decreased.It also has advantages of simple fabrication and good linearity as well as the stability.更多还原