【摘要】 提出了提高硅深反应离子刻蚀的新方法。该方法在硅的侧壁PECVD淀积SiO2,硅的底部采用热氧化的方法形成SiO2。由于在刻蚀中硅与SiO2的刻蚀选择比为120∶1~125∶1,因此SiO2层可以抑制在硅-玻璃结构的刻蚀中出现的lag和footing效应,扫描电镜结果也证明,采用改进工艺后的硅结构在经过长时间的过刻蚀后仍然保持了完整性。硅陀螺测试结果也证明了改进工艺的正确性。更多还原

【Abstract】 New methods for improving the quality of the silicon deep reactive ion etching(DRIE) procedure were investigated.It suggested that a PECVD oxide layer was deposited at the silicon sidewall and a thermal oxide layer was formed at the silicon backside.Due to the silicon to SiO2 etching selectivity(120∶1~125∶1),these oxide layers could protect the silicon microstructures from the damages caused by the lag and footing effects usually occurred in the basic silicon-on-glass(SOG) process.The SEM result confirms that the silicon structure can endure a long time overetch and the structure surface can remain intact by the modified processes.The gyroscope device test results are also in good agreement with new process methods.更多还原