【摘要】 当集成电路的特征尺寸小于0.25μm时,浅沟道隔离(STI)逐渐成为CMOS工艺器件隔离的标准工艺技术。相比较于硅石(silica)研磨液,二氧化铈(CeO2)研磨液由于其比较高的研磨速度、高的选择比和自动停止的特性,而广泛地应用于直接的浅沟道隔离(DSTI)化学机械平坦化(CMP)工艺中。在简要介绍了CMP的一些基本知识后,着重介绍了CeO2研磨液的特性及其在直接的浅沟槽隔离化学机械平坦化(DSTI-CMP)中的应用。更多还原

【Abstract】 Shallow trench isolation(STI) becomes the mainstream of device isolation of 0.25 μm below CMOS technology.Because of the more outstanding performance than that of silica slurry,such as high remove rate,high selectivity and auto-stop properties,ceria slurry is adopted in DSTI CMP process widely.After fundamental introduction of CMP,the characteristics of CeO2 slurry and its applications in DSTI were discussed.更多还原