【摘要】 在非掺杂LEC(liquid encapsulated Czochralski)半绝缘GaAs晶体中碳和硼是主要的残留杂质,这两种杂质影响衬底的半绝缘性能和制造的器件性能。在分析GaAs中碳、硼杂质结合和分离机理基础上,采取真空烘烧、降低氧化硼温度、控制氧化硼水含量和在富砷熔体中生长晶体等措施,达到了对GaAs晶体中残留杂质硼和碳的控制。更多还原

【Abstract】 In undoped semi-insulting(SI)GaAs crystals grown by LEC method,carbon and boron are two main residual impurities.The impurities influence SI character and performance of production.Based on the analyzing of incorporation and extraction mechanism of carbon and boron impurities in GaAs,adopting the measures of baking heater system,decreasing temperature of boric oxide encapsulated,controlling the water content in the boric oxide and growing crystal in As-rich GaAs melt etc,the control of carbon and boron residual impurity in GaAs crystal was achieved.更多还原