【摘要】 通过计算沟道电场的分布,研究了受主陷阱对AlGaN/GaN HEMT器件击穿特性的影响。研究发现,有受主陷阱的条件下,漏端出现电场峰值,栅端电场峰值被大幅度削减。当Vg=0 V,Vd=60 V,受主陷阱浓度NA=1×1017cm-3时,栅端电场峰值与不加受主陷阱时相比可下降到56%。受陷阱电荷影响,当击穿电压大于某个电压时,漏端电场峰值超过栅端电场峰值,此时,击穿发生在漏端。该仿真结果修正了HEMT击穿总发生在栅端边缘处的传统看法。更多还原

【Abstract】 The effects of acceptor trap on the breakdown character of AlGaN/GaN HEMT were investigated through evaluated electric field distribution in the channel.It is shown that the electrical field peak rises at the drain edge while it falls at the gate edge.With the acceptor trap,the electrical field peak at the gate edge is reduced to 56% while Vg=0 V,Vd=60 V and NA=1×1017 cm-3.When breakdown voltage goes beyond a certain voltage,affected by acceptor traps,the electrical field peak at the drain edge will exceed that at the gate edge,and the breakdown will occur in the neighborhood of the drain edge.更多还原