【摘要】 测量300mm双面磨削硅片损伤层厚度,不仅可以为优化双面磨削工艺提供科学依据,并最终可以减少双面磨削损伤层厚度,而且可以有助于减少抛光时间,改善抛光硅片的几何参数。本文应用恒定腐蚀法和双晶衍射法测量了300mm硅片双面磨削工艺后的损伤层厚度,对恒定腐蚀法进行了较深入的研究,并结合恒定腐蚀法的结果对硅片进行双晶衍射。得出以下结论:杨氏腐蚀液因为对缺陷具有良好的择优性能,可以用以损伤层厚度检测。而硝酸腐蚀液因为对缺陷不具有良好的择优性能,因而不能用以损伤层厚度检测;恒定腐蚀法可以粗略测定磨削硅片损伤层厚度,而双晶衍射法可以精确测定磨削硅片损伤层厚度;根据恒定腐蚀法的测试结果来进行双晶衍射,可以减少测试样品的数量,节省试验经费;300mm直拉P型<100>硅片经2000#砂轮双面磨削后的损伤层厚度为12.5μm。更多还原

【Abstract】 The subsurface damage depth measurement of double side grinding of 300 mm silicon wafer can not only give a correct basis for process improvement and reduce the subsurface damage depth of double side grinding,but also help reduce polishing time to improve geometry parameter of polished wafer.Etching and ’double crystal diffraction’ were used to measure the subsurface damage depth of double side grinding of 300 mm silicon wafer,and a deep research was done in etching.A test in silicon wafer by double crystal diffraction was conducted.Experiments results show that the ’yang’ solution can measure the subsurface damage depth due to its good selection to defect,but HNO3 solution can not do it because it has no selection to defect;etching can measure subsurface damage depth inaccurately and double crystal diffraction can measure it accurately;reduced test number was to save the experiment cost;the subsurface damage depth of 300 mm P type CZ silicon <100> wafer after double side grinding by 2000# diamond wheel is 12.5 μm.更多还原