【摘要】 用射频磁控溅射法在快速热处理过的Pt/Ti/SiO2/Si(100)基体上制备了Ba0.7Sr0.3TiO3薄膜。通过引入溅射因子α,在相同工艺条件(高温大功率溅射)下,对靶材成分进行调整,使薄膜成分无化学计量比偏离。薄膜成相较未调整前有显著改善,低角区的衍射杂峰消失。{100}方向有择优生长,同体材料及sol-gel法制备的BST薄膜有明显不同,研究认为是成分调整后,薄膜成分无偏离所致。更多还原

【Abstract】 BST thin films were prepared on Pt/Ti/SiO₂/Si（100） substrates by RF magnetron sputtering.Thin film fabricated from Ba_0.7Sr_0.3TiO₃ target has component deviations.XRD peaks in low angle region indicate the existence of Ba,Sr or Ti oxides.By introducing sputtering factors,the BST thin films from Ba_1.00Sr_0.48TiO_3.18 target were prepared.The obtained thin film has Ba/Sr/Ti ratio of 0.7/0.3/1.XRD pattern shows higher peaks in {100} orientations and no disordered peaks in low angle region.The preferred {100} orientation is distinguished from the results of BST ceramics and BST thin films made by sol-gel methods reported.更多还原