【摘要】 介绍了W/Ti合金扩散阻挡层在集成电路布线技术中的作用及应用情况。阐述了W/Ti合金靶材的特性参数-相对密度、微观结构、金属纯度,与W/Ti合金薄膜性能之间的关系,指出高密度、高纯度、富Ti相含量少的合金靶材是制备优良W/Ti合金扩散阻挡层薄膜的基本条件。介绍了制备W/Ti合金靶材的3种方法-真空热压、惰性气体热压、热等静压,并概述了不同方法制备的靶材性能上的差异,给出制备高性能W/Ti合金靶材的工艺条件。更多还原

【Abstract】 The application of tungsten-titanium diffusion barrier layer in the integrated circuit was presented.The relationship between tungsten-titanium sputtering target characteristics,density,microstructure,metal purity and film performance,was reviewed.Target material with high density,high purity,low content of Ti rich β phase is a fundamental reqirement to produce films with good quality.Hot press and hot isostatic press methods used to fabricate tungsten-titanium sputtering targets were introduced.Properties of W-Ti sputter targets made by different methods were summarized.更多还原