【摘要】 采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-S i薄膜晶化的影响,采用XRD,R am an,SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20 m in薄膜仍为非晶结构(a-S i),在450℃下退火20 m in后非晶硅开始晶化且随着温度的升高,且晶化程度加强。更多还原

【Abstract】 Amorphous silicon(a-Si) thin films were deposited on glass substrate by PECVD,and polycrystalline silicon(poly-Si) thin films were prepared by aluminum-induced crystallization(AIC).The effect of annealing temperature on the crystallization of a-Si films was investigated.The AIC poly-Si thin films were characterized by XRD,Raman and SEM.It was found that the a-Si film remains amorphous after annealing at 400℃ for 20min,but it begins to crystallize after annealing at 450℃ for 20min with its crystallinity improved obviously with increasing annealing temperature.更多还原