【摘要】 在不同的衬底温度下,通过脉冲激光淀积(PLD)方法在Si衬底上生长出c轴高度取向的ZnO薄膜。ZnO薄膜的结构分别通过X射线衍射(XRD)和广延X射线吸收精细结构(EXAFS)来表征,而表面成份和化学态则通过X射线光电子能谱来研究。利用光致发光(PL)来研究样品的发光特性。XRD结果和EXAFS结果都表明了500℃时生长的ZnO薄膜的结晶性比300℃时生长的要好。EXAFS结果和XPS结果显示,300℃时生长的ZnO薄膜处于富氧状态,而500℃时生长的则处于缺氧状态。结合XRD谱、EXAFS谱、XPS谱和PL谱的结果可以看到:随着ZnO薄膜的结晶性变好,它的紫外发光增强;另一方面,随着ZnO薄膜中O的含量减少,绿光发射变强。我们的结果表明绿光发射与ZnO中氧空位(Vo)有关。更多还原

【Abstract】 Highly c-axis orientated ZnO films were grown on silicon substrate by pulsed laser deposition(PLD).The films were characterized with X-ray diffraction(XRD),extended X-ray absorption fine structure(EXAFS),X-ray photoelectron spectroscopy(XPS) and photoluminescence(PL).The results show that substrate temperature strongly affects oxygen content of the ZnO film.For example,the ZnO film grown at 300 ℃ is oxygen rich whereas at 500 ℃ the better-crystallized film is oxygen deficient.We found that as crystallinity improves,ultraviolet emission intensity increases.Moreover,as oxygen content decreases,green light emission intensity becomes increasingly stronger possiby because of an increase of oxygen vacancy.更多还原