【摘要】 本文用中频反应磁控溅射技术制备了Al2O3∶Ce3+的非晶薄膜。这些薄膜的光致发光峰是在370 nm到405 nm范围内,它们来自于Ce3+的5d1激发态向基态4f1的两个劈裂能级的跃迁。发光强度强烈的依赖于薄膜中的掺杂浓度和沉积时的基片温度。Ce3+含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的。薄膜发光是来自于氯化铈分子中的发光中心,而不是其他的掺杂Ce3+。随铈含量增加5d与4f之间的能量差减小,导致随铈含量增加光致发光峰向低能方向的移动。薄膜试样的晶体结构应用X射线衍射分析。俄歇电子谱用于对薄膜材料的化学组分进行定性分析。发射纯蓝光的Al2O3∶Ce3+非晶薄膜在平板显示等领域有着广泛的潜在应用前景。更多还原

【Abstract】 Ce-doped Al₂O₃ films,grown by medium frequency reactive magnetron sputtering,were characterized with X-ray diffraction（XRD）,X-ray energy dispersive spectroscopy（EDS）,photoluminescence spectroscopy（PL） and Auger spectroscopy（AES）.The results show that the electron transition,from the excited 5d¹ level to the two split 4f¹ levels of Ce³⁺ ions,results in the PL peaks in the range of 370 nm to 405 nm,and that the Ce concentration and the substrate temperature strongly affect the relative intensity of the peaks.We found that the light emission originates from the light-emission sites of cerium chloride molecules instead of Ce ions(Ce³⁺).As Ce concentration increases,the energy difference between 5d¹ and 4f¹ decreases,and the emission peaks associated with Ce show a red-shift.The blue light emission of amorphous Al₂O₃∶Ce³⁺ film is a promising material in display technology.更多还原