【摘要】 基于ZnO形成的机理,运用半导体能带理论,分析了金属和ZnO的欧姆接触和肖特基接触特性;在p-Si衬底上,采用直流及射频溅射获得掺Al的ZnO薄膜;用电子束蒸发In/AgI、n/Al、Ti/Au,微电子光刻工艺制作范德堡、传输线、梳状电极和n-ZnO/p-Si异质结UV增强光电探测器,并在200~500℃时,在氩气保护下制作合金样品,测量样品的I—V特性、电阻率、载流子浓度、异质PN结的UV光谱响应,以及对XPS结构组分进行分析等.测试结果表明,采用金属功函数低的In、Ti做中间导电层,并在400℃退火合金后,In/Ag、In/Al、Ti/Au与n-ZnO薄膜形成了良好的欧姆接触.更多还原

【Abstract】 According to the grouth principle of ZnO film and using the energy band theory of semiconductor we analysed the ohmic and Schottky contact properties of ZnO with metals.ZnO film with Al doped was grown on the p-Si substate by using DC and RF sputtering method.In/Ag,In/Al and Ti/Au were evaporated by using electronic beam evaporation,Van der Pauw,TLM,forked electrodes and n-ZnO/p-Si heterojunction by using microelectronic photo-etching,and thermal-annealing was performed at temperatures 200℃~500 ℃ in Ar atmosphere. The characteristics of I—V,resistance,carrier density,UV photoelectrical spectrum of PN junction and XPS were tested.The results show that using metals In,Ti as middle conductive layer annealed at 400℃,better ohmic electrode has been formed between In/Ag,In/Al,Ti/Au and n-ZnO films respectively.更多还原