【摘要】 通过引入金属有机源——二乙基锌和二氧化碳,用等离子体增强化学气相沉积(PECVD)的方法在低温下制备高质量(002)取向的氧化锌薄膜,详细研究了衬底温度对薄膜质量的影响.实验发现,衬底温度对氧化锌的取向性和晶粒的大小都有显著的影响.随着温度的提高,氧化锌的取向性增强,温度为230℃时得到单一(002)取向的六角结构的氧化锌薄膜,其XRD的半高宽为0.26.°从其透射谱可以观察到典型的激子吸收线,从光致发光谱上可以观察到一个强而窄(半高宽度大约为125 m eV)的3.26 eV紫外激子发射.更多还原

【Abstract】 High quality ZnO thin films have been grown on Si（001） substrate via plasma enhanced chemical vapor deposition（PECVD） using diethylzinc（Zn（C₂H₅）₂） and carbon dioxide（CO₂） as reactant sources at low temperature.In this paper,the dependence of the quality of ZnO thin film on the growth temperature is studied.The substrate temperature has important effect on the orientation and the grain size of ZnO film,and the orientation of ZnO films increases as the growth temperature increases.A high quality ZnO thin film with a c-axis-orientated wurtize structure is obtained at the growth temperature of 230 ℃,X-ray diffraction（XRD） shows that the full width at half maximum（FWHM） of（002） ZnO is about 0.26°.A pronounced exciton absorption peak is observed in transmission spectrum.A strong free excitonic emission with a narrow photoluminescence spectrum FWHM of 125 meV at 3.26 eV is observed.更多还原