【摘要】 首先采用真空热蒸发法在玻璃基片上沉积厚度约为500 nm的铁膜,然后对铁膜在温度为553~673K的条件下恒温硫化6 h,制备F eS2薄膜.对制备的薄膜进行X射线衍射和显微结构分析,发现:合适的硫化温度为603~653 K,所得薄膜为单一物相的F eS2薄膜,n(S)/n(F e)值为1.94~1.96,接近理想化学配比,薄膜晶粒大小均匀,表面致密.更多还原

【Abstract】 About 500 nm thick Fe thin films were deposited on the glass substrate by thermal evaporation firstly,and then they were sulfurized at different temperature to synthesize pyrite thin films.In order to study the effect of sulfidation temperature on the pyrite thin films,the Fe thin films were sulfurized at temperature of 553～673 K,respectively for 6 h.The resulting films were characterized by X-ray diffract and microstructure analysis.It was found that ideal FeS₂ films with（n（S）/n（Fe）） of 1.94～1.96 have been prepared under the optimum sulfidation temperature of about（603～653 K） and the films are uniform and dense.更多还原