【摘要】 提出了一种精确、高效的FET/pHEMT器件模型参数提取的改进方法。首先利用FET器件漏端零偏置的简化模型,测出寄生元件值,再利用正常配置时FET/pHEMT器件网络S参数,使用“剥离”技术将寄生部分全部剔除。最后利用网络导纳参数的表达式,确定了本征电路元件参数。采用了该方法的提取过程物理意义清晰,优化处理容易。对NEC器件的测试结果显示,该改进方法效率高,测试精度小于3%。更多还原

【Abstract】 An accurate,effective improved method for extracting the model parameters of FET/pHEMT device is proposed.First,the values of parasitic elements were measured using the simple model within which the FET was zero drain biased.Then,making use of the FET/pHEMT S-parameters measured in its normal bias condition,the parasitic contributions were removed by skillfully using the de-embedding technique.Finally,the intrinsic circuit element parameters were determined using the admittance parameter expressions.The physical meaning for the method is very clear,and the result optimization is easy.The experiment on a NEC device shows that the improved method is efficient.The test error is less than 3%.更多还原