【摘要】 通过采用环形传输线方法(CILM),电流-电压(I-V)曲线、表面形貌等方法,研究不同的Ni/Au厚度比和空气气氛下合金退火温度对p型氮化镓欧姆接触特性造成的影响。根据Ni/Au与p型氮化镓欧姆接触的形成机制,采用合适的Ni/Au厚度比及退火温度,得到比接触电阻率(ρc)为1.09×10-5Ω.cm2的Ni/Au-p-GaN电极,并分析了Ni在退火过程中对形成良好的欧姆接触中所起到的作用。更多还原

【Abstract】 The specific contact resistance was characterized by current-voltage(I-V)measurements based on the circular transmission line model(CTLM).It was investigated by changing the thickness of Ni/Au and the anneal temperature to find influence of the ohmic contact characteristic of p-type GaN annealed under the air ambience.According to the formation of ohmic contact,by using appropriate thickness of Ni/Au and anneal temperature,the little contact resistance of Ni/Au electrode on p-type GaN was achieved and it is 1.09E-5 Ω·cm2.It was also analyzed how the Ni layer affects the forming of better ohmic contact when annealed.Its surface morphology was observed under the atom force microscopy and the constituents of the annealed alloy were detected through scanning electron microscopy.更多还原