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钛酸锶铌基高介变阻器陶瓷的制备与表征

Preparation and Characterization on the Nb Doped SrTiO₃ Based Varistor Ceramics

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【Author】 LI Xing-jiao~1,BAO Jun-bo~1,LI Shao-ping~2,ZHUANG Yan~3,GU Hao-shuang~4,YUAN Run-zhang~5(1.Dept.of Solid State Electronics,Huazhong University of Science and Technology,Wuhan 430074,China;2.Advanced Recording Technology Laboratory,Seagate Technology,Minneapolis,MN,55435 USA;3.GCI Science & Technology Co.Ltd,Guangzhou 510310,China;4.Dept.of Physics and Electronics,Hubei University,Wuhan 430062,China;5.State Key Lab.of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070,China)

【机构】华中科技大学电子科学与技术系； Advanced Recording Technology Laboratory Seagate Technology；广州通信研究所；湖北大学物电学院；武汉理工大学材料复合新技术国家重点实验室湖北武汉430074；湖北武汉430074； Minneapolis MN55435； USA；广东广州510310；湖北武汉430062；湖北武汉430070；

【摘要】采用铌掺杂的方法制备钛酸锶(STO)粉末,烧成钛酸锶基变阻器陶瓷。经电流-电压(I-V)特性和介电特性测试表明,多种掺杂的Nb-STO具有优异的性能,其介电常数很大,有良好的介电温度系数和频率系数,介电损耗小,压敏电压低,非线性系数大。全面给出了压敏电阻的9项指标,并与文献中的数值进行了比较。eεff高达(4~9)×105,具有良好的介电温度系数(|αs|<0.3%)、频率系数(fr<12%)和电压温度系数(|k|=0.2%);介电损耗小(tanδ<1%);非线性系数大(α=4~10);电流密度为1 mA时的场强(E1 mA)值很低(0.3~2.9 V/mm);电压系数小于10%。更多还原

【Abstract】 Nb-doped strontium titanate（Nb-STO） varistor ceramics have been prepared by a powder method.With this method,the permittivity ε_eff of the multiple doping Nb-STO films have been greatly increased up to(4⁹×)10⁵ with good permittivity-temperature factor｜α_s｜<0.3%,permittivity-frequency factor f_r<12%,and voltage-temperature factor │k│=0.2%;and dielectric loss is reduced as tan δ<1%,dielectric nonlinear factor α=4¹0;the field strength at a current density of 1 mA/mm² E_{1 mA}= 0.32.9 V/mm.Voltage coefficient is less than 10%.These values are better than those in other reference papers.更多还原