【摘要】 应用射频磁控溅射工艺在Pt/Ti/SiO2/Si衬底上制备具有钙钛矿结构的PZT铁电薄膜。对影响PZT薄膜性能、形貌的工作气压、基片温度、氧/氩+氧之比、溅射功率、退火温度5个主要因素进行分析,在其允许范围和精度内设置5个水平,并根据均匀设计理论对该5因素及5水平进行均匀设计。不同温度下退火之后测定了PZT薄膜的厚度、SEM表面形貌、电容、介电损耗、电滞回线(包括矫顽场强、饱和极化强度、剩余极化强度)等。最后对响应结果进行多元二次线性回归,得出了回归方程。探讨达到最优化薄膜特性所需要的工艺条件。更多还原

【Abstract】 The PZT ferroelectric thin films with perovskite structure are deposited on the Pt/Ti/SiO₂/Si substrate by magnetron sputtering.The effects of the five main factors such as atmospheric pressure,substrate temperature,ratio of O₂/Ar+O₂,sputtering power and annealed temperature on the performance of the PZT ferroelectric thin films are analyzed by uniform design at the five levels.The mathematical models of the effects of atmospheric pressure,substrate temperature,ratio of O₂/Ar+O₂,sputtering power and annealed temperature on thickness,capacitance,tan δ,P-E hysteresis loop（including E_c,P_s and P_r） of thin films are established by quadratic regression analysis.The models show that there is a optimize potential in PZT ferroelectric thin films preparation process by RF-magnetron sputtering.更多还原