【摘要】 Si纳米氧化线是构筑基于Si的纳米器件的基础。通过AFM针尖诱导阳极氧化加工的n型Si(100)的实验得到凸出的n型Si(100)氧化物高度和偏置电压成线性关系,与针尖扫描速度成负对数关系,并在前人的基础上深化了AFM针尖诱导氧化加工的机理和理论模型,得到了合适的加工条件为偏压8 V和扫描速度1μm/s。更多还原

【Abstract】 Silicon nano oxidation lines are the basic structures in Si nano devices.According to the experimental results of AFM tip induced oxidation of silicon under various voltage biases and scanning speeds,we found that the height of the silicon oxidation was directly propotional to the voltage bias and inversely to the log of the scanning speed.Based on the formers’ theories,the mechanism and the theoretical modeling of AFM tip induced oxidation was improved,and we got the proper conditions to perform AFM oxidation of silicon: voltage bias of 8 V and scanning speed of 1 μm/s.更多还原