【摘要】 采用R.F反应溅射法制备SnO2导电薄膜,用XRD、AFM、XPS研究了薄膜的结构和组成对导电性能的影响。XRD和AFM研究表明,随着衬底温度的增加,SnO2薄膜从非晶向多晶结构转变,表面粗糙度减弱,薄膜的表面电阻大幅增加。采用XPS对薄膜表面成分进行分析,对不同衬底温度下Sn3d5/2拟合发现,薄膜表面存在Sn2+和Sn4+两种混合价态。随着衬底温度的增加,Sn3d5/2能谱位置与峰宽并没有变化。对O1s能谱进行Gaussian拟合后发现,薄膜表面的氧以晶格氧(Ol2at-)和化学吸附氧(Oab-s)两种方式存在。实验证明,Oa-bs含量与SnO2表面电阻成正比关系。更多还原

【Abstract】 Tin oxide thin films have been deposited on Si（100） substrates by R.F.reactive sputtering technique.Surface Appearance and compositions were studied by AFM,XPS and XRD.The results revealed that the SnO₂film was the multi-crystal constructive n-type semiconductor whose carrier was oxygen hole.Sn had double electrovalence(Sn²⁺and Sn⁴⁺) in the tin oxide film.Accordingly,Oxygen 1s peak of SnO₂film was analyzed by Gaussian function.The results showed that surface oxygen ware composed of lattice oxygen(O^2-_lat) and absorb oxygen(O^-_abs).With the increasing of substrate temperature,Proportion of O^-_absand surface resistance of SnO₂ film increased.更多还原