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Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films

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【Author】 ZHAO Songqing1,2), ZHOU Yueliang1), WANG Shufang1), ZHAO Kun1,2), and HAN Peng1) 1) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China 2) Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China

【Abstract】 Polycrystalline SnO2 thin films were deposited on sapphire substrates at 450°C under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electri- cal properties of SnO2 thin films was studied. X-ray diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak cen- tered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films.

【关键词】 tin oxide； pulsed laser deposition； oxygen pressure； PLD； resistivity；
【Key words】 tin oxide； pulsed laser deposition； oxygen pressure； PLD； resistivity；
【基金】 This work was financially supported by the National Natural Science Foundation of China (No. 50532090).
  • 【文献出处】 Rare Metals ,稀有金属(英文版) , 编辑部邮箱 ,2006年06期
  • 【分类号】TB383.2
  • 【被引频次】12
  • 【下载频次】37
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