【摘要】 采用PL Mapping技术,检测6英寸SI-GaAs晶片的均匀性,从而得到样品中的缺陷分布状况。本文主要通过光荧光谱获得样品表面和内部丰富信息,利用光谱图中颜色的不同来分析样品缺陷的不均匀分布等特点;对比样品局部发光强度信号和发光峰位的变化曲线图及化学腐蚀图片,进一步讨论由于缺陷而造成的样品均匀性的变化。更多还原

【Abstract】 In this paper,the defects distribution of SI-GaAs wafer was studied using PL Mapping technique in detail.The experiment results showed the information about the sample,s surface and inner analysed by the spectrum.We analysed the nonuniform defects distribution according to different colours in the spectral map?By comparing PL Mapping with line profile of peak int and chemical etching pictures,we discussed uniformity change of the sample quality due to the existential defects.更多还原